? semiconductor components industries, llc, 2010 october, 2010 -- rev. 3 1 publication order number: pzt3904t1/d PZT3904T1G general purpose transistor npn silicon features ? these devices are pb--free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector -- emitter voltage v ceo 40 vdc collector -- base voltage v cbo 60 vdc emitter -- base voltage v ebo 6.0 vdc collector current -- continuous i c 200 madc thermal characteristics characteristic symbol max unit total device dissipation (note 1) t a =25 ? c p d 1.5 12 w mw/ ? c thermal resistance junction--to--ambient (note 1) r ja 83.3 ? c/w thermal resistance junction--to--lead #4 r ja 35 ? c/w junction and storage temperature range t j ,t stg -- 5 5 t o +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. f unctional operation above the recommended operating conditions is not implied. ex tended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr-- 4 with 1 oz and 713 mm 2 of copper area. http://onsemi.com collector 2, 4 1 base 3 emitter ?for information on tape and reel specifications, including part orientatio n and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. device package shipping ? ordering information PZT3904T1G sot--223 (pb--free) 1000 / tape & reel sot--223 case 318e style 1 marking diagram 1 ayw 1am g g 1am = specific device code a = assembly location y = year w = work week g = pb--free package (note: microdot may be in either location)
PZT3904T1G http://onsemi.com 2 electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min max unit off characteristics (note 2) collector -- emitter breakdown voltage (note 3) (i c =1.0madc,i b =0) v (br)ceo 40 -- vdc collector -- base breakdown voltage (i c =10 m adc, i e =0) v (br)cbo 60 -- emitter -- base breakdown voltage (i e =10 m adc, i c =0) v (br)ebo 6.0 -- base cutoff current (v ce =30vdc,v eb =3.0vdc) i bl -- 50 nadc collector cutoff current (v ce =30vdc,v eb =3.0vdc) i cex -- 50 on characteristics (note 3) dc current gain (note 2) (i c =0.1madc,v ce =1.0vdc) (i c =1.0madc,v ce =1.0vdc) (i c =10madc,v ce =1.0vdc) (i c =50madc,v ce =1.0vdc) (i c = 100 madc, v ce =1.0vdc) h fe 40 70 100 60 30 -- -- 300 -- -- -- collector -- emitter saturation voltage (note 3) (i c =10madc,i b =1.0madc) (i c =50madc,i b =5.0madc) v ce(sat) -- -- 0.2 0.3 vdc base -- emitter saturation voltage (note 3) (i c =10madc,i b =1.0madc) (i c =50madc,i b =5.0madc) v be(sat) 0.65 -- 0.85 0.95 vdc small-- signal characteristics current -- gain -- bandwidth product (i c =10madc,v ce = 20 vdc, f = 100 mhz) f t 300 -- mhz output capacitance (v cb =5.0vdc,i e =0,f=1.0mhz) c obo -- 5.0 pf input capacitance (v eb =0.5vdc,i c =0,f=1.0mhz) c ibo -- 8.0 input impedance (v ce =10vdc,i c = 1.0 madc, f = 1.0 khz) h ie 1.0 10 k voltage feedback ratio (v ce =10vdc,i c = 1.0 madc, f = 1.0 khz) h re 0.5 8.0 x10 -- 4 small -- signal current gain (v ce =10vdc,i c = 1.0 madc, f = 1.0 khz) h fe 100 400 -- output admittance (v ce =10vdc,i c = 1.0 madc, f = 1.0 khz) h oe 1.0 40 m mhos noise figure (v ce =5.0vdc,i c = 100 m adc, r s =1.0k ,f=1.0khz) nf -- 5.0 db switching characteristics delay time (v cc =3.0vdc,v be =--0.5vdc, i c =10madc,i b1 =1.0madc) t d -- 35 ns rise time t r -- 35 storage time (v cc =3.0vdc, i c =10madc,i b1 =i b2 =1.0madc) t s -- 200 fall time t f -- 50 2. fr-- 5 = 1.0 0.75 0.062 in. 3. pulse test: pulse width 300 m s, duty cycle 2.0%.
PZT3904T1G http://onsemi.com 3 figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s <4pf* +3 v 275 10 k c s <4pf* <1ns -- 0 . 5 v +10.9 v 300 ns duty cycle = 2% <1ns -- 9 . 1 v ? +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 m s * total shunt capacitance o f test jig and connectors
PZT3904T1G http://onsemi.com 4 typical transient characteristics figure 3. capacitance reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , collector current (ma) 5000 1.0 v cc =40v i c /i b =10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j =25 ? c t j = 125 ? c figure 5. turn -- on time i c , collector current (ma) 70 100 200 300 500 50 figure 6. rise time i c , collector current (ma) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t,risetime(ns) figure 7. storage time i c , collector current (ma) figure 8. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r t,falltime(ns) f t , storage time (ns) s ? v cc =40v i c /i b =10 v cc =40v i b1 =i b2 i c /i b =20 i c /i b =10 i c /i b =10 t r @v cc =3.0v t d @v ob =0v 40 v 15 v 2.0 v i c /i b =10 i c /i b =20 i c /i b =10 i c /i b =20 t ? s =t s -- 1 / 8 t f i b1 =i b2
PZT3904T1G http://onsemi.com 5 typical audio small-- signal characteristics noise figure variations (v ce =5.0vdc,t a =25 ? c, bandwidth = 1.0 hz) figure 9. f, frequency (khz) 4 6 8 10 12 2 0.1 figure 10. r s , source resistance (k ) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f=1.0khz i c =1.0ma i c =0.5ma i c =50 m a i c = 100 m a source resistance = 200 i c =1.0ma source resistance = 200 i c =0.5ma source resistance = 500 i c = 100 m a source resistance = 1.0 k i c =50 m a figure 11. current gain i c , collector current (ma) 70 100 200 300 50 figure 12. output admittance i c , collector current (ma) h , current gain h , output admittance ( mhos) figure 13. input impedance i c , collector current (ma) figure 14. voltage feedback ratio i c , collector current (ma) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe m -- 4 hp a rameters (v ce =10vdc,f=1.0khz,t a =25 ? c)
PZT3904T1G http://onsemi.com 6 typical static characteristics figure 15. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce =1.0v t j = +125 ? c +25 ? c -- 5 5 ? c figure 16. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c =1.0ma t j =25 ? c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma figure 17. ?on? voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 1.2 0.2 figure 18. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -- 0 . 5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 -- 1 . 0 -- 1 . 5 -- 2 . 0 200 ? t j =25 ? c v be(sat) @i c /i b =10 v ce(sat) @i c /i b =10 v be @v ce =1.0 v +25 ? c to +125 ? c -- 5 5 ? cto+25 ? c +25 ? c to +125 ? c -- 5 5 ? cto+25 ? c vc for v ce(sat) vb for v be(sat)
PZT3904T1G http://onsemi.com 7 package dimensions sot--223 (to--261) case 318e--04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 ? mm inches ? scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e -- -- e1 0 ? 1 0 ? 0 ? 1 0 ? l l 0 . 2 0 -- -- -- -- -- -- 0 . 0 0 8 -- -- -- -- -- -- style 1: pin 1. base 2. collector 3. emitter 4. collector *for additional information on our pb--free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further noti ce to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation speci al, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performa nce may vary over time. all operating parameters, including ?typicals? must be validated for each custo mer application by customer?s technical experts. scillc does not conve y any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant int o the body, or other applications intended to support or sustain life, or for any other application in which the f ailure of the scillc product could create a situation where personal inj ury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthoriz ed application, buyer shall indemnify and hold scillc and its officers, em ployees, subsidiaries, affiliates, and distributors harmless against all claims, cos ts, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, an y claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the p art. scillc is an equal opportunity/affirmative action employer. this literature is subj ect to all applicable copyright la ws and is not for resale in any manner. publication ordering information n. american technical support : 800--282--9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81--3--5773--3850 pzt3904t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303--675--2175 or 800--344--3860 toll free usa/canada fax : 303--675--2176 or 800--344--3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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